inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD684 description collector-emitter sustaining voltage- : v ceo(sus) = 300v(min) high dc current gain - : h fe = 1500(min.)@i c = 2a low colle ctor-emitter saturation voltage- : v ce(sat) = 2.0v(max) @i c = 4a applications igniter applications. high voltage switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 600 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 5 v i c collector current-continuous 6 a i b b base current-continuous 1 a p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD684 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.5a; l= 40mh 300 v v ce( sat ) collector-emitter saturation voltage i c = 4a; i b = 40ma b 2.0 v v be( sat ) base-emitter saturation voltage i c = 4a; i b = 40ma b 2.5 v i cbo collector cutoff current v cb = 600v; i e = 0 500 a i ebo emitter cutoff current v eb = 5v; i c = 0 500 a h fe-1 dc current gain i c = 2a; v ce = 2v 1500 h fe-2 dc current gain i c = 4a; v ce = 2v 200 c ob collector output capacitance v cb = 50v, i e = 0; f test = 1mhz 35 pf switching times t on turn-on time 1.0 s t s storage time 8.0 s t f fall time i c = 4a; i b1 = -i b2 = 40ma; r l = 25 ,v cc =100v 5.0 s isc website www.iscsemi.cn 2
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